High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy

Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

Nitrogen content of GaAsN quantum wells by in situ monitoring during MOVPE growth

Metal–organic vapor phase epitaxial growth of GaAsN quantum wells is monitored by in situ reflectance measurements. Correlation between the change in the reflectance intensity and nitrogen content of the quantum well is established. The reflectance as a function of time also reveals if there is deterioration of the crystalline quality during growth. This method together with X-ray diffraction a...

Characteristics of GaAsN/GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

Pseudomorphic four-period GaAs0.978N0.022/GaAs0.78Sb0.22 type-II multiquantum well structures were grown on 100 GaAs substrates by metalorganic vapor phase epitaxy at 530 °C. The GaAs0.978N0.022 layers were grown at a V/III ratio of 685 and N/V ratio of 0.96, whereas the GaAs0.78Sb0.22 was grown at a V/III ratio of 3.8 and Sb/V ratio of 0.8. The superlattice peaks in the x-ray diffraction -2 sc...

Enhanced optical properties of the GaAsNÕGaAs quantum-well structure by the insertion of InAs monolayers

Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well ~QW! structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence ~PL!. Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure...

Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs

Self-assembled GaInAs quantum dots (QDs) embedded in GaIn(N)As were grown by atmospheric pressure metalorganic vapor phase epitaxy. The dependence of the photoluminescence (PL) properties on the material composition of the barrier layer was investigated. The emission wavelength and intensity of the QDs could be tuned by controlling the indium and nitrogen compositions in the barrier layer. By u...